Monte Carlo simulations of AlGaN/GaN heterojunction field-effect transistors (HFETs)

Herbert, DC; Uren, MJ; Hughes, BT; Hayes, DG; Birbeck, JCH; Balmer, R; Martin, T; Crow, GC; Abram, RA; Walmsley, M; Davies, RA; Wallis, RH; Phillips, WA; Jones, S

Abstract

Self-consistent Monte Carlo simulations are reported for AlGaN/GaN HFETs. Hot-carrier scattering rates are determined by fitting experimental ionization coefficients and the doping character of the GaN is obtained from substrate bias measurements. Preliminary simulations for a simple model of the AlGaN surface are described and results are found to be consistent with experimental data. The high-frequency response of short-gate-length transistors is found to be sensitive to the charge state of the free AlGaN surface and it is proposed that current-slump phenomena may also be related to deep levels at this surface. Breakdown calculations show interesting two-dimensional effects close to the drain contact.

Citation

Herbert, D., Uren, M., Hughes, B., Hayes, D., Birbeck, J., Balmer, R., …Jones, S. (2002). Monte Carlo simulations of AlGaN/GaN heterojunction field-effect transistors (HFETs). Journal of Physics: Condensed Matter, 14(13), 3479-3497. https://doi.org/10.1088/0953-8984/14/13/307

• Journal Article Type: Article
• Publication Date: Apr 8, 2002
• Deposit Date: Dec 13, 2006
• Journal: Journal of Physics: Condensed Matter
• Print ISSN: 0953-8984
• Electronic ISSN: 1361-648X
• Publisher: IOP Publishing
• Peer Reviewed: Peer Reviewed
• Volume: 14
• Issue: 13
• Pages: 3479-3497
• DOI: https://doi.org/10.1088/0953-8984/14/13/307
• Keywords: Electron-transport, Breakdown voltage, GAN, Nitride, Impact.
• Public URL: https://durham-repository.worktribe.com/output/1626343