Active Micromachined Integrated Terahertz Circuits

Kazemi, H.; Wootton, S.T.G.; Cronin, N.J.; Davies, S.R.; Miles, R.E.; Pollard, R.D.; Chamberlain, J.M.; Steenson, D.P.; Bowen, J.W.

Abstract

Schottky barrier diodes have been integrated into on-chip rectangular waveguides. Two novel techniques have been developed to fabricate diodes with posts suitable for integration into waveguides. One technique produces diodes with anode diameters of the order of microns with post heights from 90 to 125 microns and the second technique produces sub-micron anodes with post heights around 20 microns. A method has been developed to incorporate these structures into a rectangular waveguide and provide a top contact onto the anode which could be used as an I.F. output in a mixer circuit. Devices have been fabricated and D.C. characterized.

Citation

Kazemi, H., Wootton, S., Cronin, N., Davies, S., Miles, R., Pollard, R., …Bowen, J. (1999). Active Micromachined Integrated Terahertz Circuits. International Journal of Infrared and Millimeter Waves, 20(5), 967-974. https://doi.org/10.1023/a%3A1021734503826

• Journal Article Type: Article
• Publication Date: May 1, 1999
• Deposit Date: Jun 3, 2016
• Publicly Available Date: Jun 7, 2016
• Journal: International Journal of Infrared and Millimeter Waves
• Print ISSN: 0195-9271
• Electronic ISSN: 1572-9559
• Publisher: Springer
• Peer Reviewed: Peer Reviewed
• Volume: 20
• Issue: 5
• Pages: 967-974
• DOI: https://doi.org/10.1023/a%3A1021734503826
• Public URL: https://durham-repository.worktribe.com/output/1604299