Professor Dagou Zeze d.a.zeze@durham.ac.uk
Professor
We describe lithography-free fabrication of sub-micron surface features on quartz substrates by the reactive ion etching (RIE) in a CF4/Ar atmosphere. These submicron glass columns are well defined, have a high aspect ratio, with the underlying substrate being very flat. The geometry of the fabricated surface columns is dependent on the RIE process parameters. The analysis of these glass columns shows that a differential etching process takes place. The optical characterization of these samples shows a significant absorption at visible wavelengths whereas the relative transmission is very high in the infrared range, suggesting that these samples could potentially be used for wavelength selection device applications.
Zeze, D., Cox, D., Weiss, B., & Silva, S. (2004). Lithography-free high aspect ratio submicron quartz columns by reactive ion etching. Applied Physics Letters, 84(8), 1362-1364. https://doi.org/10.1063/1.1647280
Journal Article Type | Article |
---|---|
Publication Date | Feb 23, 2004 |
Deposit Date | Oct 24, 2006 |
Publicly Available Date | Apr 21, 2011 |
Journal | Applied Physics Letters |
Print ISSN | 0003-6951 |
Electronic ISSN | 1077-3118 |
Publisher | American Institute of Physics |
Peer Reviewed | Peer Reviewed |
Volume | 84 |
Issue | 8 |
Pages | 1362-1364 |
DOI | https://doi.org/10.1063/1.1647280 |
Keywords | Quartz, Sputter etching, Surface structure, Vitrification, Micromachining. |
Public URL | https://durham-repository.worktribe.com/output/1593301 |
Published Journal Article
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Copyright Statement
© 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Zeze, D. A. and Cox, D. C. and Weiss, B. L. and Silva, S. R. P. (2004) Lithography-free high aspect ratio submicron quartz columns by reactive ion etching. Applied physics letters., 84 (8). pp.1362-1364 and may be found at http://dx.doi.org/10.1063/1.1647280
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