Raman and finite-element analysis of a mechanically strained silicon microstructure

Bowden, M.; Gardiner, D.J.; Wood, D.; Burdess, J.; Harris, A.; Hedley, J.

Abstract

Raman microspectroscopy has been used to determine the volumetric micro-strain distribution in mechanically stressed silicon microstructures. Data are presented as strain images with a spatial resolution of around 0.8 µm. A useful correlation is demonstrated between finite-element analysis calculations of volumetric strain and Raman shift. The results demonstrate that silicon beam structures incorporating a 90° bend will experience a non-uniform stress distribution along the bend radius for small radii of curvature.

Citation

Bowden, M., Gardiner, D., Wood, D., Burdess, J., Harris, A., & Hedley, J. (2001). Raman and finite-element analysis of a mechanically strained silicon microstructure. Journal of Micromechanics and Microengineering, 11(1), 7-12. https://doi.org/10.1088/0960-1317/11/1/302

• Journal Article Type: Article
• Publication Date: 2001-01
• Deposit Date: Jun 8, 2006
• Journal: Journal of Micromechanics and Microengineering
• Print ISSN: 0960-1317
• Electronic ISSN: 1361-6439
• Publisher: IOP Publishing
• Peer Reviewed: Peer Reviewed
• Volume: 11
• Issue: 1
• Pages: 7-12
• DOI: https://doi.org/10.1088/0960-1317/11/1/302
• Keywords: Crystalline silicon, Cubic-crystals, Stress, Spectroscopy, Frequencies, Phonons.
• Public URL: https://durham-repository.worktribe.com/output/1585478
• Publisher URL: http://www.iop.org/EJ/abstract/0960-1317/11/1/302