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Self-sustained current oscillation above 100 GHz in a GaAs/AlAs superlattice

Schomburg, E.; Henini, M.; Chamberlain, J.M.; Steenson, D.P.; Brandl, S.; Hofbeck, K.; Renk, K.F.; Wegscheider, W.

Self-sustained current oscillation above 100 GHz in a GaAs/AlAs superlattice Thumbnail


Authors

E. Schomburg

M. Henini

J.M. Chamberlain

D.P. Steenson

S. Brandl

K. Hofbeck

K.F. Renk

W. Wegscheider



Abstract

A GaAs/AlAs superlattice with a large miniband (120 meV) showed self-sustained current oscillation at a frequency of 103 GHz giving rise to microwave emission (power 0.5 mW). The emission line had a linewidth of about 1 MHz and was tuneable by about 800 MHz. An analysis suggests that the transport in the superlattice was mainly due to electrons in the lowest miniband and that the oscillation was caused by traveling dipole domains. We also observed frequency locking of the current oscillation attributed to a synchronization of domain propagation by the external high-frequency field.

Citation

Schomburg, E., Henini, M., Chamberlain, J., Steenson, D., Brandl, S., Hofbeck, K., …Wegscheider, W. (1999). Self-sustained current oscillation above 100 GHz in a GaAs/AlAs superlattice. Applied Physics Letters, 74(15), 2179-2181. https://doi.org/10.1063/1.123793

Journal Article Type Article
Publication Date Apr 12, 1999
Deposit Date Aug 18, 2015
Publicly Available Date Aug 19, 2015
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 74
Issue 15
Pages 2179-2181
DOI https://doi.org/10.1063/1.123793
Public URL https://durham-repository.worktribe.com/output/1579957

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Copyright Statement
© 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 74, 2179 (1999) and may be found at http://dx.doi.org/10.1063/1.123793






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