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In situ study of the effect of temperature on the electronic structure of NixMn3–xO4 + thin films using scanning tunneling spectroscopy

Basu, A.; Brinkman, A.W.; Klusek, Z.; Datta, P.K.; Kowalczyk, P.

In situ study of the effect of temperature on the electronic structure of NixMn3–xO4 + thin films using scanning tunneling spectroscopy Thumbnail


Authors

A. Basu

A.W. Brinkman

Z. Klusek

P.K. Datta

P. Kowalczyk



Abstract

NixMn3–xO4 + (0.4x1) are a series of cubic-spinel-structured material exhibiting a negative temperature coefficient of resistance. The resistance as a function of temperature (T) has been measured from 20 to 200 °C and the data have been fitted to a variable range hopping model in which the resistivity is described as = 0T exp(T0/T)0.5 where T0 was found to be 2.24×105 K. Scanning tunneling spectroscopy measurements were carried out over the temperature range of 20–300 °C, to study the shape of the local density of states (LDOS). Such measurements have not been carried out on this class of spinel structured materials before. The distribution of the LDOS around the Fermi level was parabolic in agreement with the model of variable range hopping. The evolution of a peak around 1.8 eV was observed with increasing temperature and found to be completely reversible with temperature.

Citation

Basu, A., Brinkman, A., Klusek, Z., Datta, P., & Kowalczyk, P. (2002). In situ study of the effect of temperature on the electronic structure of NixMn3–xO4 + thin films using scanning tunneling spectroscopy. Journal of Applied Physics, 92(7), 4123-4125. https://doi.org/10.1063/1.1505690

Journal Article Type Article
Publication Date 2002-10
Deposit Date Jan 9, 2009
Publicly Available Date Apr 26, 2011
Journal Journal of Applied Physics
Print ISSN 0021-8979
Electronic ISSN 1089-7550
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 92
Issue 7
Pages 4123-4125
DOI https://doi.org/10.1063/1.1505690
Keywords Sputtered nickel manganate films, STM, STS.
Public URL https://durham-repository.worktribe.com/output/1579871

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Copyright Statement
Copyright (2002) American Institute of Physics.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Basu, A. and Brinkman, A. W. and Klusek, Z. and Datta, P. K. and Kowalczyk, P. (2002) 'In situ study of the effect of temperature on the electronic structure of NixMn3–xO4 + thin films using scanning tunneling spectroscopy.', Journal of applied physics., 92 (7). pp. 4123-4125.

and may be found at http://dx.doi.org/10.1063/1.1505690




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