V.A. Shalygin
Terahertz luminescence in strained GaAsN:Be layers under strong electric fields
Shalygin, V.A.; Vorobjev, L.E.; Firsov, D.A.; Panevin, V.Y.; Sofronov, A.N.; Andrianov, A.V.; Zakhar'in, A.O.; Egorov, A.Y.; Gladyshev, A.G.; Bondarenko, O.V.; Ustinov, V.M.; Zinov'ev, N.N.; Kozlov, D.V.
Authors
L.E. Vorobjev
D.A. Firsov
V.Y. Panevin
A.N. Sofronov
A.V. Andrianov
A.O. Zakhar'in
A.Y. Egorov
A.G. Gladyshev
O.V. Bondarenko
V.M. Ustinov
N.N. Zinov'ev
D.V. Kozlov
Abstract
The authors report on the experimental studies of terahertz emission from strained GaAsN/GaAs microstructures doped with beryllium at the conditions of electric breakdown of the shallow impurity. The terahertz emission spectrum demonstrates several distinctive signatures that are related to spontaneous optical transitions between resonant and localized states of the acceptor. The energy spectrum calculated for the Be acceptor in the GaAsN/GaAs heterostructure fits reasonably well with the experimentally observed peaks.
Citation
Shalygin, V., Vorobjev, L., Firsov, D., Panevin, V., Sofronov, A., Andrianov, A., …Kozlov, D. (2007). Terahertz luminescence in strained GaAsN:Be layers under strong electric fields. Applied Physics Letters, 90(16), Article 161128. https://doi.org/10.1063/1.2730745
Journal Article Type | Article |
---|---|
Acceptance Date | Mar 23, 2007 |
Online Publication Date | Apr 20, 2007 |
Publication Date | Apr 20, 2007 |
Deposit Date | Jul 16, 2007 |
Journal | Applied Physics Letters |
Print ISSN | 0003-6951 |
Electronic ISSN | 1077-3118 |
Publisher | American Institute of Physics |
Peer Reviewed | Peer Reviewed |
Volume | 90 |
Issue | 16 |
Article Number | 161128 |
DOI | https://doi.org/10.1063/1.2730745 |
Public URL | https://durham-repository.worktribe.com/output/1573912 |
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