Skip to main content

Research Repository

Advanced Search

Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence

Bryant, A; Yang, S; Mawby, P; Xiang, D; Ran, L; Tavner, PJ; Palmer, PR

Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence Thumbnail


Authors

A Bryant

S Yang

P Mawby

D Xiang

L Ran

PJ Tavner

PR Palmer



Citation

Bryant, A., Yang, S., Mawby, P., Xiang, D., Ran, L., Tavner, P., & Palmer, P. (2011). Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence. IEEE Transactions on Power Electronics, 26(10), 3019-3031. https://doi.org/10.1109/tpel.2011.2125803

Journal Article Type Article
Publication Date Oct 1, 2011
Deposit Date Nov 3, 2011
Publicly Available Date Dec 16, 2011
Journal IEEE Transactions on Power Electronics
Print ISSN 0885-8993
Electronic ISSN 1941-0107
Publisher Institute of Electrical and Electronics Engineers
Peer Reviewed Peer Reviewed
Volume 26
Issue 10
Pages 3019-3031
DOI https://doi.org/10.1109/tpel.2011.2125803
Keywords Capacitance, Charge carrier density, Converters, Equations, Insulated gate bipolar transistors, Junctions, Logic gates.
Public URL https://durham-repository.worktribe.com/output/1525990

Files

Published Journal Article (506 Kb)
PDF

Copyright Statement
© 2011 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.





You might also like



Downloadable Citations