Defect energy levels in HfO2 high-dielectric-constant gate oxide

Xiong, K.; Robertson, J.; Gibson, M.C.; Clark, S.J.

Abstract

This letter presents calculations of the energy levels of the oxygen vacancy and oxygen interstitial defects in HfO2 using density functional methods that do not need an empirical band gap correction. The levels are aligned to those of the Si channel using the known band offsets. The oxygen vacancy gives an energy level nearer the HfO2conduction band and just above the Si gap, depending on its charge state. It is identified as the main electron trap in HfO2. The oxygen interstitial gives levels just above the oxide valence band.

Citation

Xiong, K., Robertson, J., Gibson, M., & Clark, S. (2005). Defect energy levels in HfO2 high-dielectric-constant gate oxide. Applied Physics Letters, 87(18), Article 183505. https://doi.org/10.1063/1.2119425

• Journal Article Type: Article
• Acceptance Date: Sep 1, 2005
• Publication Date: Oct 31, 2005
• Deposit Date: Jan 31, 2012
• Publicly Available Date: Aug 18, 2015
• Journal: Applied Physics Letters
• Print ISSN: 0003-6951
• Electronic ISSN: 1077-3118
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 87
• Issue: 18
• Article Number: 183505
• DOI: https://doi.org/10.1063/1.2119425
• Public URL: https://durham-repository.worktribe.com/output/1509724