Controlled reactive ion etching and plasma regrowth of titanium oxides of known thickness for production of metal-oxide-metal diodes

Dodd, L.E.; Gallant, A.J.; Wood, D.

Abstract

The successful production, via two different oxidation processes, of metal-oxide-metal (MOM) diodes is presented. An innovative reactive ion etching and plasma assisted regrowth process has been used to provide oxides, which are in the thickness range 4.0–5.1 nm. These are thinner and physically more uniform than oxides grown in a furnace, resulting in diodes which should conduct via electron tunnelling across the MOM junction. Transmission electron microscopy analysis has been used in conjunction with time of flight secondary ion mass spectrometry analysis to verify oxide thickness and uniformity.

Citation

Dodd, L., Gallant, A., & Wood, D. (2013). Controlled reactive ion etching and plasma regrowth of titanium oxides of known thickness for production of metal-oxide-metal diodes. Micro and Nano Letters, 8(8), 476-478. https://doi.org/10.1049/mnl.2013.0177

• Journal Article Type: Article
• Publication Date: Aug 1, 2013
• Deposit Date: Aug 29, 2013
• Publicly Available Date: Jul 14, 2014
• Journal: Micro and Nano Letters
• Electronic ISSN: 1750-0443
• Publisher: Institution of Engineering and Technology (IET)
• Peer Reviewed: Peer Reviewed
• Volume: 8
• Issue: 8
• Pages: 476-478
• DOI: https://doi.org/10.1049/mnl.2013.0177
• Public URL: https://durham-repository.worktribe.com/output/1451292