L.E. Dodd
Development of Phase Shift Lithography for the Production of Metal-Oxide-Metal Diodes
Dodd, L.E.; Rosamond, M.C.; Gallant, A.J.; Wood, D.
Abstract
Metal-oxide-metal (MOM) diodes have been produced by combining two novel techniques: a reactive ion etche and subsequent plasma oxidation, and a phase shift lithography process. This has resulted in a significant reduction in device feature sizes, down to sub-micron dimensions and with an improved zero voltage curvature coefficient of up to 2.8 V-1 for the associated diodes. Given the use of MOM diodes in high speed rectification applications, the combination of the reduction in diode area as well as the controlled oxide growth aims to assist in the improved cutoff frequency of the devices, thus ensuring the potential for high speed applications.
Citation
Dodd, L., Rosamond, M., Gallant, A., & Wood, D. (2014). Development of Phase Shift Lithography for the Production of Metal-Oxide-Metal Diodes. Micro and Nano Letters, 9(7), 437-440. https://doi.org/10.1049/mnl.2014.0102
Journal Article Type | Article |
---|---|
Publication Date | Jul 1, 2014 |
Deposit Date | Apr 16, 2014 |
Publicly Available Date | Jan 21, 2015 |
Journal | Micro and Nano Letters |
Electronic ISSN | 1750-0443 |
Publisher | Institution of Engineering and Technology (IET) |
Peer Reviewed | Peer Reviewed |
Volume | 9 |
Issue | 7 |
Pages | 437-440 |
DOI | https://doi.org/10.1049/mnl.2014.0102 |
Keywords | MIM devices, Diodes, Lithography, Oxidation, Phase shifting masks, Plasma materials processing, Rectification, Sputter etching. |
Public URL | https://durham-repository.worktribe.com/output/1456313 |
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Copyright Statement
This paper is a postprint of a paper submitted to and accepted for publication in Micro and Nano Letters and is subject to Institution of Engineering and Technology Copyright. The copy of record is available at IET Digital Library.
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