Solution-processed SiO2 gate insulator formed at low temperature for zinc oxide thin-film transistors

Jeong, Y.; Pearson, C.; Kim, H.-G.; Park, M.-Y.; Kim, H.; Do, L.-M.; Petty, M.C.

Abstract

We report on the low-temperature formation (180 °C) of a SiO2 dielectric layer from solution-processed perhydropolysilazane. A bottom-gate zinc oxide thin-film transistor has subsequently been fabricated that possesses a carrier mobility of 3 cm2 V s−1, an on/off ratio of 107 and minimal hysteresis in its transfer and output characteristics.

Citation

Jeong, Y., Pearson, C., Kim, H., Park, M., Kim, H., Do, L., & Petty, M. (2015). Solution-processed SiO2 gate insulator formed at low temperature for zinc oxide thin-film transistors. RSC Advances, 5(45), 36083-36087. https://doi.org/10.1039/c5ra02989a

• Journal Article Type: Article
• Acceptance Date: Apr 15, 2015
• Publication Date: Apr 15, 2015
• Deposit Date: Apr 23, 2015
• Publicly Available Date: Apr 15, 2016
• Journal: RSC Advances
• Publisher: Royal Society of Chemistry
• Peer Reviewed: Peer Reviewed
• Volume: 5
• Issue: 45
• Pages: 36083-36087
• DOI: https://doi.org/10.1039/c5ra02989a
• Public URL: https://durham-repository.worktribe.com/output/1430841