Interfacial Contribution to Thickness Dependent in-plane Anisotropic Magnetoresistance

Tokaç, M.; Wang, M.; Jaiswal, S.; Rushforth, A.W.; Gallagher, B.L.; Atkinson, D.; Hindmarch, A.T.

Abstract

We have studied in-plane anisotropic magnetoresistance(AMR) in cobaltfilms with overlayers having designed electrically interface transparency. With an electrically opaque cobalt/overlayer interface, the AMR ratio is shown to vary in inverse proportion to the cobaltfilm thickness; an indication that in-plane AMR is a consequence of anisotropic scattering with both volume and interfacial contributions. The interface scattering anisotropy opposes the volume scattering contribution, causing the AMR ratio to diminish as the cobaltfilm thickness is reduced. An intrinsic interface effect explains the significantly reduced AMR ratio in ultra-thin films.

Citation

Tokaç, M., Wang, M., Jaiswal, S., Rushforth, A., Gallagher, B., Atkinson, D., & Hindmarch, A. (2015). Interfacial Contribution to Thickness Dependent in-plane Anisotropic Magnetoresistance. AIP Advances, 5(12), Article 127108. https://doi.org/10.1063/1.4937556

• Journal Article Type: Article
• Acceptance Date: Nov 27, 2015
• Online Publication Date: Dec 7, 2015
• Publication Date: Dec 1, 2015
• Deposit Date: Dec 16, 2015
• Publicly Available Date: Jan 6, 2016
• Journal: AIP Advances
• Electronic ISSN: 2158-3226
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 5
• Issue: 12
• Article Number: 127108
• DOI: https://doi.org/10.1063/1.4937556
• Public URL: https://durham-repository.worktribe.com/output/1393739