Densification of a-IGZO with low-temperature annealing for flexible electronics applications

Troughton, J.; Downs, P.; Price, R.; Atkinson, D.

Abstract

Amorphous InGaZnO (a-IGZO) thin-film transistors are a leading contender for active channel materials in next generation flat panel displays and flexible electronics. Improved electronic functionality has been linked to the increased density of a-IGZO, and while much work has looked at high-temperature processes, studies at temperatures compatible with flexible substrates are needed. Here, compositional and structural analyses show that short term, low-temperature annealing (<6 h) can increase the density of sputtered a-IGZO by up to 5.6% for temperatures below 300 °C, which is expected to improve the transistor performance, while annealing for longer times leads to a subsequent decrease in density due to oxygen absorption.

Citation

Troughton, J., Downs, P., Price, R., & Atkinson, D. (2017). Densification of a-IGZO with low-temperature annealing for flexible electronics applications. Applied Physics Letters, 110(1), Article 011903. https://doi.org/10.1063/1.4973629

• Journal Article Type: Article
• Acceptance Date: Dec 22, 2016
• Online Publication Date: Jan 4, 2017
• Publication Date: Jan 4, 2017
• Deposit Date: Jan 16, 2017
• Publicly Available Date: Jan 4, 2018
• Journal: Applied Physics Letters
• Print ISSN: 0003-6951
• Electronic ISSN: 1077-3118
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 110
• Issue: 1
• Article Number: 011903
• DOI: https://doi.org/10.1063/1.4973629
• Public URL: https://durham-repository.worktribe.com/output/1367305