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Molecular gating of transistors by amine-terminated layers

Shaya, O; Amit, I; Einati, H; Burstein, L; Shacham-Diamand, Y; Rosenwaks, Y

Authors

O Shaya

H Einati

L Burstein

Y Shacham-Diamand

Y Rosenwaks



Citation

Shaya, O., Amit, I., Einati, H., Burstein, L., Shacham-Diamand, Y., & Rosenwaks, Y. (2012). Molecular gating of transistors by amine-terminated layers. Applied Surface Science, 258(8), 4069-4072

Journal Article Type Article
Publication Date 2012
Deposit Date Jul 5, 2018
Journal Applied Surface Science
Print ISSN 0169-4332
Electronic ISSN 1873-5584
Publisher Elsevier
Volume 258
Issue 8
Pages 4069-4072
Public URL https://durham-repository.worktribe.com/output/1326879