O Shaya
Molecular gating of transistors by amine-terminated layers
Shaya, O; Amit, I; Einati, H; Burstein, L; Shacham-Diamand, Y; Rosenwaks, Y
Authors
Dr Iddo Amit iddo.amit@durham.ac.uk
Assistant Professor
H Einati
L Burstein
Y Shacham-Diamand
Y Rosenwaks
Citation
Shaya, O., Amit, I., Einati, H., Burstein, L., Shacham-Diamand, Y., & Rosenwaks, Y. (2012). Molecular gating of transistors by amine-terminated layers. Applied Surface Science, 258(8), 4069-4072
Journal Article Type | Article |
---|---|
Publication Date | 2012 |
Deposit Date | Jul 5, 2018 |
Journal | Applied Surface Science |
Print ISSN | 0169-4332 |
Electronic ISSN | 1873-5584 |
Publisher | Elsevier |
Volume | 258 |
Issue | 8 |
Pages | 4069-4072 |
Public URL | https://durham-repository.worktribe.com/output/1326879 |
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