Laurie J. Phillips
Current Enhancement via a TiO2 Window Layer for CSS Sb2Se3 Solar Cells: Performance Limits and High Voc
Phillips, Laurie J.; Savory, Christopher N.; Hutter, Oliver S.; Yates, Peter J.; Shiel, Huw; Mariotti, Silvia; Bowen, Leon; Birkett, Max; Durose, Ken; Scanlon, David O.; Major, Jonathan D.
Authors
Christopher N. Savory
Oliver S. Hutter
Peter J. Yates
Huw Shiel
Silvia Mariotti
Leon Bowen leon.bowen@durham.ac.uk
Senior Manager (Electron Microscopy)
Max Birkett
Ken Durose
David O. Scanlon
Jonathan D. Major
Abstract
Antimony selenide (Sb 2 Se 3 ) is an emerging chalcogenide photovoltaic absorber material that has been the subject of increasing interest in recent years, demonstrating rapid efficiency increases with a material that is simple, abundant, and stable. This paper examines the material from both a theoretical and practical standpoint. The theoretical viability of Sb 2 Se 3 as a solar photovoltaic material is assessed and the maximum spectroscopically limited performance is estimated, with a 200 nm film expected to be capable of achieving a photon conversion efficiency of up to 28.2%. By adapting an existing CdTe close-spaced sublimation (CSS) process, Sb 2 Se 3 material with large rhubarb-like grains is produced and solar cells are fabricated. We show that the established CdS window layer is unsuitable for use with CSS, due to intermixing during higher temperature processing. Substituting CdS with the more stable TiO 2 , a power conversion efficiency of 5.5% and an open-circuit voltage V oc of 0.45 V are achieved; the voltage exceeding current champion devices. This paper demonstrates the potential of CSS for scalable Sb 2 Se 3 deposition and highlights the promise of Sb 2 Se 3 as an abundant and low-toxicity material for solar applications.
Citation
Phillips, L. J., Savory, C. N., Hutter, O. S., Yates, P. J., Shiel, H., Mariotti, S., Bowen, L., Birkett, M., Durose, K., Scanlon, D. O., & Major, J. D. (2019). Current Enhancement via a TiO2 Window Layer for CSS Sb2Se3 Solar Cells: Performance Limits and High Voc. IEEE Journal of Photovoltaics, 9(2), 544-551. https://doi.org/10.1109/jphotov.2018.2885836
Journal Article Type | Article |
---|---|
Online Publication Date | Dec 19, 2018 |
Publication Date | Mar 31, 2019 |
Deposit Date | Mar 7, 2019 |
Publicly Available Date | Mar 7, 2019 |
Journal | IEEE Journal of Photovoltaics |
Print ISSN | 2156-3381 |
Electronic ISSN | 2156-3403 |
Publisher | Institute of Electrical and Electronics Engineers |
Peer Reviewed | Peer Reviewed |
Volume | 9 |
Issue | 2 |
Pages | 544-551 |
DOI | https://doi.org/10.1109/jphotov.2018.2885836 |
Public URL | https://durham-repository.worktribe.com/output/1306617 |
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This work is licensed under a Creative Commons Attribution 3.0 License. For more information, see http://creativecommons.org/licenses/by/3.0/
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