X-ray diffraction imaging of fully packaged n–p–n transistors under accelerated ageing conditions
(2022)
Journal Article
Tanner, B. K., Danilewsky, A., & McNally, P. J. (2022). X-ray diffraction imaging of fully packaged n–p–n transistors under accelerated ageing conditions. Journal of Applied Crystallography, 55(5), 1139-1146. https://doi.org/10.1107/s1600576722007142
X-ray diffraction imaging was used to monitor the local strains that developed around individual n–p–n bipolar transistors within fully encapsulated packages under conditions of extremely high forward bias to simulate accelerated ageing. Die warpage... Read More about X-ray diffraction imaging of fully packaged n–p–n transistors under accelerated ageing conditions.