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Direct observation of stress relaxation process in 4H-SiC homoepitaxial layers via in-situ synchrotron X-ray topography (2018)
Presentation / Conference Contribution
Guo, J., Yang, Y., Raghothamachar, B., Dudley, M., Welt, S., Danilewsky, A., McNally, P., & Tanner, B. (2018, December). Direct observation of stress relaxation process in 4H-SiC homoepitaxial layers via in-situ synchrotron X-ray topography. Presented at 2017 International Conference on Silicon Carbide and Related Materials, Washington DC