First-principles calculations of 2×2 reconstructions of GaN surfaces
(2005)
Presentation / Conference Contribution
Salinero, V., Gibson, M., Brand, S., Clark, S., & Abram, R. (2004, July). First-principles calculations of 2×2 reconstructions of GaN surfaces. Presented at 27th International Conference on the Physics of Semiconductors : ICPS-27., Flagstaff, Arizona
e GaN and other group III nitrides have great importance in a wide range of technological applications. Difficulty in growing good quality epitaxial GaN currently prevents the full technological potential of this material. The ab initio studies prese... Read More about First-principles calculations of 2×2 reconstructions of GaN surfaces.