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Determination of band structure parameters in nitride alloys for use in quantum well calculations (1999)
Journal Article
Dugdale, D., Brand, S., Abram, R., & Pugh, S. (1999). Determination of band structure parameters in nitride alloys for use in quantum well calculations. physica status solidi (b) – basic solid state physics, 216(1), 351-354. https://doi.org/10.1002/%28sici%291521-3951%28199911%29216%3A1%3C351%3A%3Aaid-pssb351%3E3.0.co%3B2-%23

The empirical pseudopotential method has been used to conduct band structure calculations on gallium and indium nitride and their alloys. Initially, the pseudopotential form factors required for the semi-empirical calculations were obtained using a M... Read More about Determination of band structure parameters in nitride alloys for use in quantum well calculations.

Dipole matrix elements and the nature of charge oscillation under coherent interband excitation in quantum wells (1999)
Journal Article
Coles, R., Abram, R., Brand, S., & Burt, M. (1999). Dipole matrix elements and the nature of charge oscillation under coherent interband excitation in quantum wells. Physical review B, 60(19), 13306-13309. https://doi.org/10.1103/physrevb.60.13306

An empirical pseudopotential method is used to model two type-I quantum-well systems, allowing the investigation of interband dipole-matrix elements and charge oscillation under coherent optical excitation. Each relevant (microscopically varying) wav... Read More about Dipole matrix elements and the nature of charge oscillation under coherent interband excitation in quantum wells.

Band-gap and k.p. parameters for GaAlN and GaInN alloys (1999)
Journal Article
Pugh, S., Dugdale, D., Brand, S., & Abram, R. (1999). Band-gap and k.p. parameters for GaAlN and GaInN alloys. Journal of Applied Physics, 86(7), 3768-3772. https://doi.org/10.1063/1.371285

Using a semi-empirical pseudopotential method, a set of band-structure calculations are performed on a range of GaInN and GaAlN alloys in both the zinc-blende and wurtzite structures. Pseudopotentials for the bulk materials are described by suitable... Read More about Band-gap and k.p. parameters for GaAlN and GaInN alloys.

Characteristics of impact ionization rates in direct and indirect gap semiconductors (1999)
Journal Article
Harrison, D., Abram, R., & Brand, S. (1999). Characteristics of impact ionization rates in direct and indirect gap semiconductors. Journal of Applied Physics, 85(12), 8186-8192. https://doi.org/10.1063/1.370658

Impact ionization rates for electrons and holes in three semiconductors with particular band structure characteristics are examined to determine underlying factors influencing their qualitative behavior. The applicability of the constant matrix eleme... Read More about Characteristics of impact ionization rates in direct and indirect gap semiconductors.

Impact ionization rate calculations in wide band gap semiconductors (1999)
Journal Article
Harrison, D., Abram, R., & Brand, S. (1999). Impact ionization rate calculations in wide band gap semiconductors. Journal of Applied Physics, 85(12), 8178-8185. https://doi.org/10.1063/1.370657

An algorithm for calculating impact ionization rates in the semiclassical Fermi’s Golden Rule approximation which is efficient close to threshold is presented. Electron and hole initiated rates are calculated for three semiconductors with particular... Read More about Impact ionization rate calculations in wide band gap semiconductors.