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Electrical and optical properties of a polymer semiconductor interface (1999)
Journal Article
Halliday, D., Gray, J., Adams, P., & Monkman, A. (1999). Electrical and optical properties of a polymer semiconductor interface. Synthetic Metals, 102(1-3), 877-878

We have fabricated a stable electrical interface between a range of n-type, p-type and undoped GaAs epitaxial layers and a film of conductive p-type polyaniline. The IV characteristics of this device show rectifying behaviour consistent with a potent... Read More about Electrical and optical properties of a polymer semiconductor interface.

Visible electroluminescence from a polyaniline-porous silicon junction (1997)
Journal Article
Halliday, D., Eggleston, J., Adams, P., Pentland, I., & Monkman, A. (1997). Visible electroluminescence from a polyaniline-porous silicon junction. Synthetic Metals, 85(1-3), 1245-1246

We have studied the interface formed between a p-type conducting polyaniline layer and an n-type porous silicon wafer, The contact has rectifying behaviour demonstrated clearly by the IV curves, We can fit our data to a simple Schottky barrier model.... Read More about Visible electroluminescence from a polyaniline-porous silicon junction.