Measurement of sky clarity using MIR radiometers as an adjunct to atmospheric Čerenkov radiation measurements
(1999)
Journal Article
Buckley, D., Dorrington, M., Edwards, P., McComb, T., Tummey, S., & Turver, K. (1999). Measurement of sky clarity using MIR radiometers as an adjunct to atmospheric Čerenkov radiation measurements. Experimental Astronomy, 9, 237-249. https://doi.org/10.1023/a%3A1008102827280
Outputs (276)
Materials Aspects Of Cdte/cds Solar Cells (1999)
Journal Article
Durose, K., Edwards, P., & Halliday, D. (1999). Materials Aspects Of Cdte/cds Solar Cells. Journal of Crystal Growth, 197, 733-742. https://doi.org/10.1016/s0022-0248%2898%2900962-2
Electrical and optical properties of a polymer semiconductor interface (1999)
Journal Article
Halliday, D., Gray, J., Adams, P., & Monkman, A. (1999). Electrical and optical properties of a polymer semiconductor interface. Synthetic Metals, 102(1-3), 877-878We have fabricated a stable electrical interface between a range of n-type, p-type and undoped GaAs epitaxial layers and a film of conductive p-type polyaniline. The IV characteristics of this device show rectifying behaviour consistent with a potent... Read More about Electrical and optical properties of a polymer semiconductor interface.
A Study Of The Depth Dependence Of Photoluminescence From Thin Film Cds/cdte Solar Cells Using Bevel Etched Samples (1998)
Journal Article
Halliday, D., Eggleston, J., & Durose, K. (1998). A Study Of The Depth Dependence Of Photoluminescence From Thin Film Cds/cdte Solar Cells Using Bevel Etched Samples. Thin Solid Films, 322, 314-318. https://doi.org/10.1016/s0040-6090%2897%2900917-6
A Photoluminescence Study Of Polycrystalline Thin-film Cdte/cds Solar Cells (1998)
Journal Article
Halliday, D., Eggleston, J., & Durose, K. (1998). A Photoluminescence Study Of Polycrystalline Thin-film Cdte/cds Solar Cells. Journal of Crystal Growth, 186, 543-549. https://doi.org/10.1016/s0022-0248%2897%2900819-1
A visible LED fabricated on porous silicon using a polyaniline contact (1997)
Journal Article
Halliday, D., Eggleston, J., Adams, P., & Monkman, A. (1997). A visible LED fabricated on porous silicon using a polyaniline contact
The influence of CdCl2 treatment and interdiffusion on grain boundary passivation in CdTe/CdS solar cells (1997)
Journal Article
Edwards, P., Halliday, D., Durose, K., Richter, H., & Bonnet, D. (1997). The influence of CdCl2 treatment and interdiffusion on grain boundary passivation in CdTe/CdS solar cells
Spectroscopic Study On The Effect Of Post-growth Annealing Of Cdte/cds Thin Film Photovoltaic Devices (1997)
Journal Article
Eggleston, J., Halliday, D., & Durose, K. (1997). Spectroscopic Study On The Effect Of Post-growth Annealing Of Cdte/cds Thin Film Photovoltaic Devices. Institute of physics conference series, 155, 441-444
Visible electroluminescence from a polyaniline-porous silicon junction (1997)
Journal Article
Halliday, D., Eggleston, J., Adams, P., Pentland, I., & Monkman, A. (1997). Visible electroluminescence from a polyaniline-porous silicon junction. Synthetic Metals, 85(1-3), 1245-1246We have studied the interface formed between a p-type conducting polyaniline layer and an n-type porous silicon wafer, The contact has rectifying behaviour demonstrated clearly by the IV curves, We can fit our data to a simple Schottky barrier model.... Read More about Visible electroluminescence from a polyaniline-porous silicon junction.
Electroluminescence from porous silicon using a conducting polyaniline contact (1996)
Journal Article
Halliday, D., Holland, E., Eggleston, J., Adams, P., Cox, S., & Monkman, A. (1996). Electroluminescence from porous silicon using a conducting polyaniline contact. Thin Solid Films, 276(1-2), 299-302. https://doi.org/10.1016/0040-6090%2895%2908102-xWe have fabricated a p-n junction using a p-type conducting polyaniline layer deposited on an n-type porous silicon layer. This junction shows rectifying behaviour. The I–V curves can be fitted to a Schottky barrier model with a barrier height of 0.8... Read More about Electroluminescence from porous silicon using a conducting polyaniline contact.