A CMOS SPAD Line Sensor With Per-Pixel Histogramming TDC for Time-Resolved Multispectral Imaging
(2019)
Journal Article
A 512 × 16 single photon avalanche diode (SPAD)-based line sensor is designed in a 0.13- μm CMOS image sensor technology for time-resolved multispectral beam scanned imaging. The sensor has 23.78- μm pixel pitch and incorporates one SPAD array with 4... Read More about A CMOS SPAD Line Sensor With Per-Pixel Histogramming TDC for Time-Resolved Multispectral Imaging.