Identification of Slow States at the SiO2/SiC Interface through Sub-Bandgap Illumination
(2012)
Presentation / Conference Contribution
Spargo, C., Furnival, B., Mahapatra, R., Goss, J., Wright, N., Horsfall, A., …Neudeck, P. (2012). Identification of Slow States at the SiO2/SiC Interface through Sub-Bandgap Illumination. In Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA (801-804). https://doi.org/10.4028/www.scientific.net/msf.717-720.801
We show that it is possible to obtain information relating to deep level interface traps, or so called ‘slow states’, by using the photo-CV characterisation method. Sub-bandgap illumination has been chosen in order to avoid band-to-band excitation fo... Read More about Identification of Slow States at the SiO2/SiC Interface through Sub-Bandgap Illumination.