Self-consistent pseudopotential calculation of electronic states associated with a reconstructed silicon vacancy
(1979)
Journal Article
Jaros, M., Rodriguez, C., & Brand, S. (1979). Self-consistent pseudopotential calculation of electronic states associated with a reconstructed silicon vacancy. Physical Review B, 19, 3137-3151
All Outputs (107)
Self-consistent Pseudopotential Calculations Of The Electronic-structure Of A Hydrogen Interstitial In Crystalline Silicon (1979)
Journal Article
Rodriguez, C., Jaros, M., & Brand, S. (1979). Self-consistent Pseudopotential Calculations Of The Electronic-structure Of A Hydrogen Interstitial In Crystalline Silicon. Solid State Communications, 31, 43-45
Electronic states associated with the substitutional nitrogen impurity in GaP<SUB>x</SUB>As<SUB>1-x</SUB> (1979)
Journal Article
Jaros, M., & Brand, S. (1979). Electronic states associated with the substitutional nitrogen impurity in GaPxAs1-x. Journal of physics. C. Solid state physics, 12, 525-539
The binding of electrons by nitrogen pairs in GaP (1979)
Journal Article
Brand, S., & Jaros, M. (1979). The binding of electrons by nitrogen pairs in GaP. Journal of physics. C. Solid state physics, 12, 2789-2796. https://doi.org/10.1088/0022-3719/12/14/015
Optimisation studies of localised defect calculations in semiconductors (1978)
Journal Article
Brand, S. (1978). Optimisation studies of localised defect calculations in semiconductors. Journal of physics. C. Solid state physics, 11, 4963-4973. https://doi.org/10.1088/0022-3719/11/24/025
Pseudopotential Calculations Of Effect Of Displacement Upon Impurity Levels Introduced By Deep Donor Oxygen In Gaas, Gap, Si And Nitrogen In Diamond (1977)
Journal Article
Brand, S., & Jaros, M. (1977). Pseudopotential Calculations Of Effect Of Displacement Upon Impurity Levels Introduced By Deep Donor Oxygen In Gaas, Gap, Si And Nitrogen In Diamond. Solid State Communications, 21, 875-877
Localized defects in III-V semiconductors (1976)
Journal Article
Jaros, M., & Brand, S. (1976). Localized defects in III-V semiconductors. Physical review. B, Solid state, 14, 4494-4505. https://doi.org/10.1103/physrevb.14.4494