All Outputs (9)

Two-dimensional Penrose-tiled photonic quasicrystals: from diffraction pattern to band structure (2000)
Journal Article
Kaliteevski, M., Brand, S., Abram, R., Krauss, T., DeLa Rue, R., & Millar, P. (2000). Two-dimensional Penrose-tiled photonic quasicrystals: from diffraction pattern to band structure. Nanotechnology, 11(4), 274-280. https://doi.org/10.1088/0957-4484/11/4/316

We report measurements of the diffraction pattern of a two-dimensional photonic quasicrystal structure and use the set of plane waves defined by the diffraction pattern as the basis of a theoretical approach to calculate the photonic band structure o... Read More about Two-dimensional Penrose-tiled photonic quasicrystals: from diffraction pattern to band structure.

Two-dimensional Penrose-tiled photonic quasicrystals: diffraction of light and fractal density of modes (2000)
Journal Article
Kaliteevski, M., Brand, S., Abram, R., Krauss, T., de La Rue, R., & Millar, P. (2000). Two-dimensional Penrose-tiled photonic quasicrystals: diffraction of light and fractal density of modes. Journal of Modern Optics, 47(11), 1771-1778. https://doi.org/10.1080/09500340008232430

We report measurements of the diffraction pattern of a two-dimensional photonic quasicrystal structure. Using a set of plane waves defined by the diffraction pattern we introduce a theoretical approach for the calculation of the band structure which... Read More about Two-dimensional Penrose-tiled photonic quasicrystals: diffraction of light and fractal density of modes.

Monte Carlo simulations of SiGe n-MODFETs with high tensile-strained Si channels (2000)
Journal Article
Crow, G., Abram, R., & Yangthaisong, A. (2000). Monte Carlo simulations of SiGe n-MODFETs with high tensile-strained Si channels. Semiconductor Science and Technology, 15(7), 770-775. https://doi.org/10.1088/0268-1242/15/7/319

A Monte Carlo simulation has been devised and used to model steady state and transient electron transport in enhancement (recessed gate) and depletion (surface gate) mode SiGe n-MODFETs that have recently been the subject of experimental study. The s... Read More about Monte Carlo simulations of SiGe n-MODFETs with high tensile-strained Si channels.

Direct calculation of k.p parameters for wurtzite AlN, GaN and InN (2000)
Journal Article
Dugdale, D., Brand, S., & Abram, R. (2000). Direct calculation of k.p parameters for wurtzite AlN, GaN and InN. Physical review B, 61(19), 12933-12938. https://doi.org/10.1103/physrevb.61.12933

Electronic band structure calculations have been performed for the wurtzite structures of AlN, GaN, and InN. In particular, the conventional k⋅p valence band parameters Ai (i=1–7) have been computed from initial empirical pseudopotential calculations... Read More about Direct calculation of k.p parameters for wurtzite AlN, GaN and InN.

Calculation of the mode structure of multilayer optical fibers based on transfer matrices for cylindrical waves (2000)
Journal Article
Kaliteevski, M., Nikolaev, V., & Abram, R. (2000). Calculation of the mode structure of multilayer optical fibers based on transfer matrices for cylindrical waves. Optics and Spectroscopy, 88(5), 792-795. https://doi.org/10.1134/1.626880

Based on the method of transfer matrices for cylindrical waves, an analytical technique for calculating the dispersion dependences and the profiles of electromagnetic waves in multilayer and graded index optical fibers is developed.

Exciton polaritons in a cylindrical microcavity with an embedded quantum wire (2000)
Journal Article
Kaliteevski, M., Brand, S., Abram, R., Nikolaev, V., Maximov, M., Ledentsov, N., …Kavokin, A. (2000). Exciton polaritons in a cylindrical microcavity with an embedded quantum wire. Physical review B, 61(20), 13791-13797. https://doi.org/10.1103/physrevb.61.13791

Exciton-light coupling in cylindrical microcavities containing quantum wires has been treated by means of classical electrodynamics within the nonlocal dielectric response model. A typical anticrossing behavior of quasi-one-dimensional exciton-polari... Read More about Exciton polaritons in a cylindrical microcavity with an embedded quantum wire.

Optical properties of asymmetric InGaAs/InP coupled quantum wells (2000)
Journal Article
Ryan, D., Abram, R., & Robbins, D. (2000). Optical properties of asymmetric InGaAs/InP coupled quantum wells. IEE proceedings. Optoelectronics, 147(2), 83-88. https://doi.org/10.1049/ip-opt%3A20000288

Asymmetric double quantum well structures with applied transverse electric field are of interest in optical modulator applications. A theoretical model of their optical properties is described. The bandstructure of the heterostructure is calculated u... Read More about Optical properties of asymmetric InGaAs/InP coupled quantum wells.

Optical eigenmodes of a cylindrical microcavity (2000)
Journal Article
Kaliteevski, M., Abram, R., & Nikolaev, V. (2000). Optical eigenmodes of a cylindrical microcavity. Journal of Modern Optics, 47(4), 677-684. https://doi.org/10.1080/09500340008233388

The optical mode structure of a cylindrical microcavity has been investigated using a transfer matrix approach. We derive exact algebraic equations from which the frequencies of the optical eigenmodes of the two polarizations can be obtained, as well... Read More about Optical eigenmodes of a cylindrical microcavity.

Monte Carlo simulations of hole transport in SiGe and Ge quantum wells (2000)
Journal Article
Crow, G., & Abram, R. (2000). Monte Carlo simulations of hole transport in SiGe and Ge quantum wells. Semiconductor Science and Technology, 15(1), 7-14. https://doi.org/10.1088/0268-1242/15/1/302

Monte Carlo simulations have been carried out to investigate factors which influence hole transport at 300 K for moderate electric fields .104–106 V m−1/ within compressively strained Si1−xGex .x D 0:15 ! 0:30/ quantum wells deposited on Si. Drift mo... Read More about Monte Carlo simulations of hole transport in SiGe and Ge quantum wells.