All Outputs (3)

A k.p model for carrier capture by a quantum well. (1995)
Journal Article
Crow, G., & Abram, R. (1995). A k.p model for carrier capture by a quantum well. Semiconductor Science and Technology, 10, 1221-1228

An investigation of graded and uniform base Ge<SUB>x</SUB>Si<SUB>1-x</SUB> HBTs using a Monte Carlo simulation. (1995)
Journal Article
Hughes, D., Abram, R., & Kelsall, R. (1995). An investigation of graded and uniform base GexSi1-x HBTs using a Monte Carlo simulation. IEEE Transactions on Electron Devices, 42, 201-208

Avalanche multiplication properties of GaAs calculated from spatially transient ionization coefficients. (1995)
Journal Article
Wilson, S., Brand, S., & Abram, R. (1995). Avalanche multiplication properties of GaAs calculated from spatially transient ionization coefficients. Solid-State Electronics, 38, 2095-2100