A detailed study of Auger recombination in 1.3 micron InGaAsP/InP quantum wells and quantum well wires.
(1990)
Journal Article
Taylor, R., Abram, R., Burt, M., & Smith, C. (1990). A detailed study of Auger recombination in 1.3 micron InGaAsP/InP quantum wells and quantum well wires. Semiconductor Science and Technology, 5, 90-104
All Outputs (3)
Matrix elements for hole-phonon scattering in a semiconductor quantum well. (1990)
Journal Article
Kelsall, R., Taylor, R., Wood, A., & Abram, R. (1990). Matrix elements for hole-phonon scattering in a semiconductor quantum well. Semiconductor Science and Technology, 5, 877-883
Realistic evaluation of impact ionisation and Auger recombination rates for the ccch transition in InSb and InGaAsP. (1990)
Journal Article
Beattie, A., Abram, R., & Scharoch, P. (1990). Realistic evaluation of impact ionisation and Auger recombination rates for the ccch transition in InSb and InGaAsP. Semiconductor Science and Technology, 5, 738-744