Critical current of Gd doped PbMo6S8 synthesised at 1500 degrees C

Zheng, DN; Sneary, AB; Hampshire, DP

Abstract

We have made a series of samples with nominal composition Pb1-xGdxMo6S8 (0 less than or equal to x less than or equal to 0.3) using a hot isostatic pressing process. A high reaction temperature of 1500 OC has been used to incorporate Gd into the lattice. The critical current density J(c) of these samples has been measured in order to investigate possible flux pinning due to the magnetic Gd ions. Adding Gd markedly decreases the critical temperature T-c and increases normal state resistivity. We attribute these changes to a decrease in carrier concentration. Also J(c) and the irreversibility field decrease progressively with increasing Gd level. The pinning force density curves of the doped samples were found to be similar to the undoped sample, indicating that J(c) is limited by the same mechanism. The results suggest that impurity phases, degraded grain boundaries or a reduction in the critical parameters are responsible for low J(c) and B-in.

Citation

Zheng, D., Sneary, A., & Hampshire, D. (1997). Critical current of Gd doped PbMo6S8 synthesised at 1500 degrees C.

• Presentation Conference Type: Conference Paper (Published)
• Publication Date: 1997
• Pages: 1005-1008
• Series Title: INSTITUTE OF PHYSICS CONFERENCE SERIES
• Series Number: 158
• Series ISSN: 0951-3248
• Keywords: MOLYBDENUM
• Public URL: https://durham-repository.worktribe.com/output/1679820