Analysis of electron multiplying charge coupled device and scientific CMOS readout noise models for Shack–Hartmann wavefront sensor accuracy

Basden, A.G.

Abstract

In recent years, detectors with subelectron readout noise have been used very effectively in astronomical adaptive optics systems. Here, we compare readout noise models for the two key faint flux level detector technologies that are commonly used: electron multiplying charge coupled device (EMCCD) and scientific CMOS (sCMOS) detectors. We find that in almost all situations, EMCCD technology is advantageous, and that the commonly used simplified model for EMCCD readout is appropriate. We also find that the commonly used simple models for sCMOS readout noise are optimistic, and we recommend that a proper treatment of the sCMOS root mean square readout noise probability distribution should be considered during instrument performance modeling and development.

Citation

Basden, A. (2015). Analysis of electron multiplying charge coupled device and scientific CMOS readout noise models for Shack–Hartmann wavefront sensor accuracy. Journal of Astronomical Telescopes, Instruments, and Systems, 1(3), Article 039002. https://doi.org/10.1117/1.jatis.1.3.039002

• Journal Article Type: Article
• Acceptance Date: Jun 25, 2015
• Online Publication Date: Jul 27, 2015
• Publication Date: Jul 27, 2015
• Deposit Date: Jun 26, 2015
• Publicly Available Date: Sep 23, 2015
• Journal: Journal of Astronomical Telescopes, Instruments, and Systems
• Electronic ISSN: 2329-4221
• Publisher: Society of Photo-optical Instrumentation Engineers
• Peer Reviewed: Peer Reviewed
• Volume: 1
• Issue: 3
• Article Number: 039002
• DOI: https://doi.org/10.1117/1.jatis.1.3.039002