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Outputs (8)

Metastable Structures Of Tetrahedral Semiconductors (1994)
Presentation / Conference Contribution
Hatton, P., Crain, J., Ackland, G., Clark, S., & Piltz, R. (1994). Metastable Structures Of Tetrahedral Semiconductors. In S. C. Schmidt, J. W. Shaner, G. A. Samara, & M. Ross (Eds.),

Tetrahedral structures and phase transitions in III-V semiconductors. (1994)
Journal Article
Crain, J., Piltz, R., Ackland, G., Clark, S., Payne, M., Milman, V., …Nam, Y. (1994). Tetrahedral structures and phase transitions in III-V semiconductors. Physical Review B (Condensed Matter), 50(12), 8389-8401. https://doi.org/10.1103/physrevb.50.8389

The BC8 structure (body-centered cubic with eight atoms per cell) is a known pressure-induced modification of both silicon and germanium. However, its diatomic analogue [the SC16 structure (a simple cubic lattice with a basis of 16 atoms)] has never... Read More about Tetrahedral structures and phase transitions in III-V semiconductors..

Theoretical study of high-density phases of covalent semiconductors. I. Ab initio treatment. (1994)
Journal Article
Crain, J., Clark, S., Ackland, G., Payne, M., Milman, V., Hatton, P., & Reid, B. (1994). Theoretical study of high-density phases of covalent semiconductors. I. Ab initio treatment. Physical Review B (Condensed Matter), 49(8), 5329-5340. https://doi.org/10.1103/physrevb.49.5329

We present detailed calculations using the total-energy pseudopotential method in the local-density approximation of the relative stability and pressure-induced behavior of complex tetrahedrally bonded structures formed metastably in silicon and germ... Read More about Theoretical study of high-density phases of covalent semiconductors. I. Ab initio treatment..