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Graph-based stochastic model for high-speed railway cutting scenarios (2015)
Journal Article
Zhou, T., Tao, C., Salous, S., Tan, Z., Liu, L., & Tian, L. (2015). Graph-based stochastic model for high-speed railway cutting scenarios. IET Microwaves, Antennas and Propagation, 9(15), 1691-1697. https://doi.org/10.1049/iet-map.2014.0827

This study proposes a stochastic channel model based on the propagation graph theory for high-speed railway (HSR) cutting scenarios. Single-input single-output wideband measurements are conducted under a cutting for acquiring realistic channel data.... Read More about Graph-based stochastic model for high-speed railway cutting scenarios.

CNT-based two terminal organic nonvolatile memory devices. (2015)
Book Chapter
Sleiman, A., Mabrook, M., Sayers, P., & Zeze, D. (2015). CNT-based two terminal organic nonvolatile memory devices. In S. Logothetidis (Ed.), Handbook of Flexible Organic Electronics: Materials, Manufacturing and Applications (413-428). Woodhead Publishing Series

Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors (2015)
Journal Article
Jeong, Y., Pearson, C., Kim, H., Park, M., Kim, H., Do, L., & Petty, M. (2016). Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors. ACS Applied Materials and Interfaces, 8(3), 2061-2070. https://doi.org/10.1021/acsami.5b10520

We report on the optimization of the plasma treatment conditions for a solution-processed silicon dioxide gate insulator for application in zinc oxide thin film transistors (TFTs). The SiO2 layer was formed by spin coating a perhydropolysilazane (PHP... Read More about Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors.