Outputs (3)

An insidious and ubiquitous menace (2015)
Journal Article
Hunt, M., & Siller, L. (2015). An insidious and ubiquitous menace. Physics world, 28(9), 40-41. https://doi.org/10.1088/2058-7058/28/9/38

When the US Department of Defense describes something as a "pervasive menace", one that can tear apart aeroplanes, shut down oil pipelines and render nuclear weapons useless, most people will react by picturing a terrorist organization or hostile for... Read More about An insidious and ubiquitous menace.

Facile technique for the removal of metal contamination from graphene (2015)
Journal Article
Wells, G., Hunt, M., Hopf, T., Vassilevski, K., Escobedo-Cousin, E., Horsfall, A., …O'Neill, A. (2015). Facile technique for the removal of metal contamination from graphene. Journal of Vacuum Science and Technology B, 33(5), Article 051802. https://doi.org/10.1116/1.4928422

Metal contamination deposited on few-layer graphene (3 ± 1 monolayers) grown on SiC(0001) was successfully removed from the surface, using low cost adhesive tape. More than 99% of deposited silver contamination was removed from the surface via peelin... Read More about Facile technique for the removal of metal contamination from graphene.

Electrical characterization of epitaxial graphene field-effect transistors with high-k Al2O3 gate dieletric fabricated on SiC substrates (2015)
Journal Article
Hopf, T., Vassilevski, K., Escobedo-Cousin, E., King, P., Wright, N., O'Neill, A., …Hunt, M. (2015). Electrical characterization of epitaxial graphene field-effect transistors with high-k Al2O3 gate dieletric fabricated on SiC substrates. Materials Science Forum, 821-823, 937-940. https://doi.org/10.4028/www.scientific.net/msf.821-823.937

Top-gated field-effect transistors have been created from bilayer epitaxial graphene samples that were grown on SiC substrates by a vacuum sublimation approach. A high-quality dielectric layer of Al2O3 was grown by atomic layer deposition to function... Read More about Electrical characterization of epitaxial graphene field-effect transistors with high-k Al2O3 gate dieletric fabricated on SiC substrates.