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Orthogonal printing of uniform nanocomposite monolayer and oriented organic semiconductor crystals for high-performance nano-crystal floating gate memory

Mao, Xi; Yang, Yonghao; Yang, Lisong; Qian, Haowen; Li, Wang; Zhao, Wenqi; Deng, Shuai; Jin, Shaohong; Jiang, Liangzhu; Liu, Changxu; Li, Wen; Yi, Mingdong; Deng, Renhua; Zhu, Jintao

Orthogonal printing of uniform nanocomposite monolayer and oriented organic semiconductor crystals for high-performance nano-crystal floating gate memory Thumbnail


Authors

Xi Mao

Yonghao Yang

Haowen Qian

Wang Li

Wenqi Zhao

Shuai Deng

Shaohong Jin

Liangzhu Jiang

Changxu Liu

Wen Li

Mingdong Yi

Renhua Deng

Jintao Zhu



Abstract

Inkjet printing is of great interest in the preparation of optoelectronic and microelectronic devices due to its low cost, low process temperature, versatile material compatibility, and ability to precisely manufacture multi-layer devices on demand. However, interlayer solvent erosion is a typical problem that limits the printing of organic semiconductor devices with multi-layer structures. In this study, we proposed a solution to address this erosion problem by designing polystyrene-block-poly(4-vinyl pyridine)-grafted Au nanoparticles (Au@PS-b-P4VP NPs). With a colloidal ink containing the Au@PS-b-P4VP NPs, we obtained a uniform monolayer of Au nano-crystal floating gates (NCFGs) embedded in the PS-b-P4VP tunneling dielectric (TD) layer using direct-ink-writing (DIW). Significantly, PS-b-P4VP has high erosion resistance against the semiconductor ink solvent, which enables multi-layer printing. An active layer of semiconductor crystals with high crystallinity and well-orientation was obtained by DIW. Moreover, we developed a strategy to improve the quality of the TD/semiconductor interface by introducing a polystyrene intermediate layer. We show that the NCFG memory devices exhibit a low threshold voltage (<3 V), large memory window (66 V), stable endurance (>100 cycles), and long-term retention (>10 years). This study provides universal guidance for printing functional coatings and multi-layer devices.

Citation

Mao, X., Yang, Y., Yang, L., Qian, H., Li, W., Zhao, W., …Zhu, J. (2024). Orthogonal printing of uniform nanocomposite monolayer and oriented organic semiconductor crystals for high-performance nano-crystal floating gate memory. Journal of Colloid and Interface Science, 668, 232-242. https://doi.org/10.1016/j.jcis.2024.04.160

Journal Article Type Article
Acceptance Date Apr 22, 2024
Online Publication Date Apr 23, 2024
Publication Date Aug 15, 2024
Deposit Date May 7, 2024
Publicly Available Date May 7, 2024
Journal Journal of Colloid and Interface Science
Print ISSN 0021-9797
Publisher Elsevier
Peer Reviewed Peer Reviewed
Volume 668
Pages 232-242
DOI https://doi.org/10.1016/j.jcis.2024.04.160
Keywords Self-assembly, Direct-ink-writing, Organic thin-film devices, Nano-crystal floating gate memory, Polymer-grafted nanoparticles
Public URL https://durham-repository.worktribe.com/output/2434019

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