Xi Mao
Orthogonal printing of uniform nanocomposite monolayer and oriented organic semiconductor crystals for high-performance nano-crystal floating gate memory
Mao, Xi; Yang, Yonghao; Yang, Lisong; Qian, Haowen; Li, Wang; Zhao, Wenqi; Deng, Shuai; Jin, Shaohong; Jiang, Liangzhu; Liu, Changxu; Li, Wen; Yi, Mingdong; Deng, Renhua; Zhu, Jintao
Authors
Yonghao Yang
Dr Lisong Yang lisong.yang@durham.ac.uk
Research Associate
Haowen Qian
Wang Li
Wenqi Zhao
Shuai Deng
Shaohong Jin
Liangzhu Jiang
Changxu Liu
Wen Li
Mingdong Yi
Renhua Deng
Jintao Zhu
Abstract
Inkjet printing is of great interest in the preparation of optoelectronic and microelectronic devices due to its low cost, low process temperature, versatile material compatibility, and ability to precisely manufacture multi-layer devices on demand. However, interlayer solvent erosion is a typical problem that limits the printing of organic semiconductor devices with multi-layer structures. In this study, we proposed a solution to address this erosion problem by designing polystyrene-block-poly(4-vinyl pyridine)-grafted Au nanoparticles (Au@PS-b-P4VP NPs). With a colloidal ink containing the Au@PS-b-P4VP NPs, we obtained a uniform monolayer of Au nano-crystal floating gates (NCFGs) embedded in the PS-b-P4VP tunneling dielectric (TD) layer using direct-ink-writing (DIW). Significantly, PS-b-P4VP has high erosion resistance against the semiconductor ink solvent, which enables multi-layer printing. An active layer of semiconductor crystals with high crystallinity and well-orientation was obtained by DIW. Moreover, we developed a strategy to improve the quality of the TD/semiconductor interface by introducing a polystyrene intermediate layer. We show that the NCFG memory devices exhibit a low threshold voltage (<3 V), large memory window (66 V), stable endurance (>100 cycles), and long-term retention (>10 years). This study provides universal guidance for printing functional coatings and multi-layer devices.
Citation
Mao, X., Yang, Y., Yang, L., Qian, H., Li, W., Zhao, W., …Zhu, J. (2024). Orthogonal printing of uniform nanocomposite monolayer and oriented organic semiconductor crystals for high-performance nano-crystal floating gate memory. Journal of Colloid and Interface Science, 668, 232-242. https://doi.org/10.1016/j.jcis.2024.04.160
Journal Article Type | Article |
---|---|
Acceptance Date | Apr 22, 2024 |
Online Publication Date | Apr 23, 2024 |
Publication Date | Aug 15, 2024 |
Deposit Date | May 7, 2024 |
Publicly Available Date | May 7, 2024 |
Journal | Journal of Colloid and Interface Science |
Print ISSN | 0021-9797 |
Publisher | Elsevier |
Peer Reviewed | Peer Reviewed |
Volume | 668 |
Pages | 232-242 |
DOI | https://doi.org/10.1016/j.jcis.2024.04.160 |
Keywords | Self-assembly, Direct-ink-writing, Organic thin-film devices, Nano-crystal floating gate memory, Polymer-grafted nanoparticles |
Public URL | https://durham-repository.worktribe.com/output/2434019 |
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http://creativecommons.org/licenses/by/4.0/
Copyright Statement
This accepted manuscript is licensed under the Creative Commons Attribution 4.0 licence. https://creativecommons.org/licenses/by/4.0/
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