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Nanomagnetic engineering of the properties of domain wall atom traps

Hayward, T.J.; West, A.D.; Weatherill, K.J.; Schrefl, T.; Hughes, I.G.; Allwood, D.A.

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T.J. Hayward

A.D. West

T. Schrefl

D.A. Allwood


We have used the results of micromagnetic simulations to investigate the effects of nanowire geometry and domain wall magnetization structure on the characteristic parameters of magnetic atom traps formed by domain walls in planar ferromagnetic nanowires. It is found that when traps are formed in the near-field of a domain wall both nanowire geometry and wall structure have a substantial effect on trap frequency (how tightly atoms are spatially confined) and adiabaticity (how closely the atoms’ magnetic moments track the applied field direction within the trap). We also show that in certain regimes a trap’s depth depends only on the amplitude of an externally applied rotating magnetic field, thus allowing it to be tuned independently of the trap’s other critical parameters.


Hayward, T., West, A., Weatherill, K., Schrefl, T., Hughes, I., & Allwood, D. (2011). Nanomagnetic engineering of the properties of domain wall atom traps. Journal of Applied Physics, 110(12), Article 123918.

Journal Article Type Article
Publication Date Dec 1, 2011
Deposit Date Jan 26, 2012
Publicly Available Date Sep 26, 2012
Journal Journal of Applied Physics
Print ISSN 0021-8979
Electronic ISSN 1089-7550
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 110
Issue 12
Article Number 123918


Published Journal Article (2.3 Mb)

Copyright Statement
© 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Hayward, T. J. and West, A. D. and Weatherill, K. J. and Schrefl, T. and Hughes, I. G. and Allwood, D. A. (2011) 'Nanomagnetic engineering of the properties of domain wall atom traps.', Journal of applied physics., 110 (12). p. 123918and may be found at

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