Limits to doping in oxides

Robertson, J.; Clark, S.J.

Abstract

The chemical trends of limits to doping of many semiconducting metal oxides is analyzed in terms of the formation energies needed to form the compensating defects. The n-type oxides are found to have high electron affinities and charge neutrality levels that lie in midgap or the upper part of their gap, whereas p-type oxides have small photoionization potentials and charge neutrality levels lying in the lower gap. The doping-limit energy range is found to vary with the bulk free energy of the compound.

Citation

Robertson, J., & Clark, S. (2011). Limits to doping in oxides. Physical review B, 83(7), Article 075205. https://doi.org/10.1103/physrevb.83.075205

• Journal Article Type: Article
• Publication Date: Feb 1, 2011
• Deposit Date: Jan 31, 2012
• Publicly Available Date: Nov 27, 2012
• Journal: Physical review B: Condensed matter and materials physics
• Print ISSN: 1098-0121
• Electronic ISSN: 1550-235X
• Publisher: American Physical Society
• Peer Reviewed: Peer Reviewed
• Volume: 83
• Issue: 7
• Article Number: 075205
• DOI: https://doi.org/10.1103/physrevb.83.075205