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Breakdown of Rigid-Unit Vibrations in Layered Semiconductors under Pressure: Application to Germanium Sulfide.

Hsueh, H.C.; Vass, H.; Clark, S.J.; Crain, J.

Authors

H.C. Hsueh

H. Vass

J. Crain



Abstract

A combination of high-sensitivity Raman scattering and ab initio computer simulations is used to explore the lattice dynamics of the prototypical layered semiconductor GeS under hydrostatic pressure. The observed and calculated pressure responses of the Ag layer shear mode are in excellent agreement over the entire pressure range of the experiments (0 to 50 kbar). Examination of the calculated phonon eigenvectors reveals that the "rigid-layer" model is an appropriate description of the lattice dynamics only under near-ambient-pressure conditions and that substantial mode admixture occurs under compression.

Citation

Hsueh, H., Vass, H., Clark, S., & Crain, J. (1995). Breakdown of Rigid-Unit Vibrations in Layered Semiconductors under Pressure: Application to Germanium Sulfide. European Physical Society Letters, 31(3), 151-155. https://doi.org/10.1209/0295-5075/31/3/005

Journal Article Type Article
Publication Date 1995-07
Deposit Date Jan 31, 2012
Journal Europhysics Letters
Print ISSN 0295-5075
Electronic ISSN 1286-4854
Publisher IOP Publishing
Peer Reviewed Peer Reviewed
Volume 31
Issue 3
Pages 151-155
DOI https://doi.org/10.1209/0295-5075/31/3/005