Nondestructive X-ray diffraction measurement of warpage in silicon dies embedded in integrated circuit packages

Tanner, B.K.; Danilewsky, A.N.; Vijayaraghavan, R.K.; Cowley, A.; McNally, P.J.

Abstract

Transmission X-ray diffraction imaging in both monochromatic and white beam section mode has been used to measure quantitatively the displacement and warpage stress in encapsulated silicon devices. The displacement dependence with position on the die was found to agree well with that predicted from a simple model of warpage stress. For uQFN microcontrollers, glued only at the corners, the measured misorientation contours are consistent with those predicted using finite element analysis. The absolute displacement, measured along a line through the die centre, was comparable to that reported independently by high-resolution X-ray diffraction and optical interferometry of similar samples. It is demonstrated that the precision is greater than the spread of values found in randomly selected batches of commercial devices, making the techniques viable for industrial inspection purposes.

Citation

Tanner, B., Danilewsky, A., Vijayaraghavan, R., Cowley, A., & McNally, P. (2017). Nondestructive X-ray diffraction measurement of warpage in silicon dies embedded in integrated circuit packages. Journal of Applied Crystallography, 50(2), 547-554. https://doi.org/10.1107/s1600576717003132

• Journal Article Type: Article
• Acceptance Date: Feb 24, 2017
• Online Publication Date: Mar 22, 2017
• Publication Date: Apr 1, 2017
• Deposit Date: May 2, 2017
• Publicly Available Date: May 3, 2017
• Journal: Journal of Applied Crystallography
• Print ISSN: 0021-8898
• Electronic ISSN: 1600-5767
• Publisher: International Union of Crystallography
• Peer Reviewed: Peer Reviewed
• Volume: 50
• Issue: 2
• Pages: 547-554
• DOI: https://doi.org/10.1107/s1600576717003132